The influence of graded InxGa1-xAs on strain distribution and the band gap in the InAs/GaAs quantum dots

Jia Wang; Qi Wang; Xin Guo; Xiaomin Ren; Xia Zhang; Yongqing Huang

doi:10.1117/12.921319

5 December 2011 The influence of graded In_xGa_1-xAs on strain distribution and the band gap in the InAs/GaAs quantum dots

Jia Wang, Qi Wang, Xin Guo, Xiaomin Ren, Xia Zhang, Yongqing Huang

Author Affiliations +

Proceedings Volume 8198, 2011 International Conference on Optical Instruments and Technology: Optoelectronic Devices and Integration; 81980K (2011) https://doi.org/10.1117/12.921319
Event: International Conference on Optical Instruments and Technology (OIT2011), 2011, Beijing, Beijing, China

Abstract

The effect of the graded In_xGa_1-xAs layer on the distribution of the strain was studied by calculating the strain of different models using the finite element method. The results demonstrate that the graded In_xGa_1-xAs layer can reduce the strain and thus lead to longer emission wavelength. The results also demonstrate that the graded In_xGa_1-xAs layer can increase strain in the GaAs capping layer which cause disadvantage to grow stacked InAs/GaAs QD structure. But the strain can be released though increase the thickness of spacer layer when grow stacked structure.

Citation Download Citation

Jia Wang, Qi Wang, Xin Guo, Xiaomin Ren, Xia Zhang, and Yongqing Huang "The influence of graded In_xGa_1-xAs on strain distribution and the band gap in the InAs/GaAs quantum dots", Proc. SPIE 8198, 2011 International Conference on Optical Instruments and Technology: Optoelectronic Devices and Integration, 81980K (5 December 2011); https://doi.org/10.1117/12.921319

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