Raman Spectroscopic Study Of Point Defects In Bulk GaAs

J. Wagner; M. Ramsteiner; H. Seelewind

doi:10.1117/12.941928

19 January 1988 Raman Spectroscopic Study Of Point Defects In Bulk GaAs

J. Wagner, M. Ramsteiner, H. Seelewind

Proceedings Volume 0822, Raman and Luminescence Spectroscopy in Technology; (1988) https://doi.org/10.1117/12.941928
Event: 31st Annual Technical Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, San Diego, CA, United States

Abstract

Raman scattering with below-band-gap light has been used to study residual extrinsic acceptors as well as the intrinsic 78/203 meV double acceptor in bulk GaAs. Both electronic and vi-bronic excitations of these defects are observed in the low-temperature Raman spectrum. Electronic scattering of extrinsic acceptors - namely carbon and zinc - in semi-insulating material provides a quantitative tool for materials characterization with a detection limit of < 5 x 10¹⁴ acceptors/cm³. Polarized Raman spectra give insight into the electronic structure of the 78/203 meV acceptor.

Citation Download Citation

J. Wagner, M. Ramsteiner, and H. Seelewind "Raman Spectroscopic Study Of Point Defects In Bulk GaAs", Proc. SPIE 0822, Raman and Luminescence Spectroscopy in Technology, (19 January 1988); https://doi.org/10.1117/12.941928

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