Paper
15 February 2012 Atomic layer deposition for fabrication of ytterbium doped fibers
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Abstract
Atomic layer deposition (ALD) was used to fabricate an ytterbium (Yb)-doped silica fiber in combination with the conventional modified chemical vapor deposition (MCVD) method. An MCVD soot-preform with a porous layer of SiO2 doped with GeO2 was coated with layers of Yb2O3 and Al2O3 prior to sintering, using the ALD method. ALD is a surface controlled CVD-type process enabling thin film deposition over large substrates with good thickness control, uniformity and high conformality. A materials analysis study showed that the dopants successfully penetrated the full thickness of 320 μm of the soot layer. Preliminary preform and fiber experiments on refractive index profiles, background losses, lifetime and the characteristic gain-loss curve were performed demonstrating the potential of this method for fabricating Yb-doped fibers with high concentration of dopants.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joan J. Montiel i Ponsoda, Lars Norin, Markus Bosund, Changgeng Ye, Mikko J. Söderlund, Ari Tervonen, and Seppo Honkanen "Atomic layer deposition for fabrication of ytterbium doped fibers", Proc. SPIE 8237, Fiber Lasers IX: Technology, Systems, and Applications, 82372B (15 February 2012); https://doi.org/10.1117/12.908725
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KEYWORDS
Atomic layer deposition

Optical fibers

Doping

Ytterbium

Silica

Refractive index

Aluminum

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