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8 February 2012 10-W reliable 90-μm-wide broad area lasers with internal grating stabilization
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Abstract
Broad area (BA) diode lasers with narrow, temperature-stable spectral lines are required for pumping narrow spectral lines in solid state lasers and for dense spectral multiplexing in direct applications. Two device technologies in particular have reached a high performance level, based on development work at the Ferdinand-Braun-Institut (FBH). Firstly, etched surface gratings can be used to form the rear facet reflector, in distributed Bragg-reflector (DBR) format. Secondly, gratings can be buried within the semiconductor using etch and overgrowth technology, to form distributed feedback (DFB) lasers. In this case, the rear facet has a high reflectivity coating, and the DFB operates effectively as the low reflectivity out-coupler. For both technologies, BA diode lasers with 90-100μm stripes operating at 975nm deliver peak continuous wave (CW) powers of over 12W within a spectral width of < 1nm (with 95% power content). Recently, reliable operation has been confirmed for CW powers of 10W, and power conversion efficiency of up to 63% has been demonstrated. However, the two technologies have different strengths. For example, DBR-BA lasers have low sensitivity to external feedback and are insensitive to the onset of spectral side-modes. In contrast, DFB-BA lasers achieve the highest reported power conversion efficiencies. A comparison of the relative merits of the two technologies for different high power laser applications is presented.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Crump, J. Fricke, C. M. Schultz, H. Wenzel, S. Knigge, O. Brox, A. Maaßdorf, F. Bugge, and G. Erbert "10-W reliable 90-μm-wide broad area lasers with internal grating stabilization", Proc. SPIE 8241, High-Power Diode Laser Technology and Applications X, 82410N (8 February 2012); https://doi.org/10.1117/12.905252
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