Translator Disclaimer
14 February 2012 High-power quantum dot semiconductor disk lasers
Author Affiliations +
The latest achievements of quantum dot based semiconductor disk lasers are reviewed. Several lasers operating at 1040 nm - 1260 nm were studied. All the structures were grown with molecular beam epitaxy on GaAs substrates. The number of quantum dot layers was varied and the gain was provided either by the ground or the excited state transition of the quantum dots. Frequency doubling of the lasers was demonstrated and the dual-gain laser geometry was found to be practical solution for intracavity frequency conversion. Intracavity heat spreader and thinned device heat management approaches are studied and compared.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jussi Rautiainen, Mantas Butkus, Igor Krestnikov, Edik U. Rafailov, and Oleg Okhotnikov "High-power quantum dot semiconductor disk lasers", Proc. SPIE 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, 824207 (14 February 2012);


Broadly tunable DBR-free semiconductor disk laser
Proceedings of SPIE (March 10 2016)
1220 nm mode-locked GaInNAs disk laser
Proceedings of SPIE (February 28 2009)
High power 1.25 µm InAs QD VECSEL based on resonant...
Proceedings of SPIE (February 21 2011)
3.5 W GaInNAs disk laser operating at 1220 nm
Proceedings of SPIE (May 08 2008)
1043nm semiconductor disk laser
Proceedings of SPIE (February 17 2010)

Back to Top