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14 February 2012 GaSb-based semiconductor disk lasers: recent advances in power scaling and narrow linewidth operation
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Abstract
The (AlGaIn)(AsSb) semiconductor materials system has been shown to be ideally suited to realize optically pumped Vertical External Cavity Surface Emitting Lasers (VECSELs) for the 2-3 μm wavelength range. For a 2 μm emitting single-chip VECSEL with a ternary GaInSb quantum well active region, employing a linear planar-concave resonator geometry, a maximum continuous wave (cw) output power of 4.2 W at 20°C heatsink temperature (6 W at 0°C) has been achieved. Standard fiber-coupled 980 nm diode lasers have been used for optical barrier pumping. Employing a W-shaped resonator with two optically pumped gain chips acting as planar folding mirrors, a maximum cw output power of 5.5 W has been achieved at a heatsink temperature of 20°C, increasing to 10.4 W when reducing the heatsink temperature to -10°C. The resonator versatility of a VECSEL also allows the insertion of additional optical elements into the optical cavity for wavelength selection and linewidth control. Employing a V-shaped folded cavity with the gain chip acting as the planar end mirror, single-mode operation with a linewidth <100 kHz at 1 W optical output power has been achieved at a lasing wavelength of 2.05 μm.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joachim Wagner, Marcel Rattunde, Tino Töpper, Sebastian Kaspar, Benno Rösener, Christian Manz, and Klaus Köhler "GaSb-based semiconductor disk lasers: recent advances in power scaling and narrow linewidth operation", Proc. SPIE 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, 82420D (14 February 2012); https://doi.org/10.1117/12.906420
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