Laser sintering of Si and Ge nano- and microparticle films toward solar cells by solution process

Akira Watanabe

doi:10.1117/12.906565

17 February 2012 Laser sintering of Si and Ge nano- and microparticle films toward solar cells by solution process

Akira Watanabe

Proceedings Volume 8244, Laser-based Micro- and Nanopackaging and Assembly VI; 82440V (2012) https://doi.org/10.1117/12.906565
Event: SPIE LASE, 2012, San Francisco, California, United States

Abstract

The laser sintering of Si particle films was studied toward a wet process manufacturing of a Si solar cell. Si particle films were formed by spin-coating from the dispersion solutions of Si nano- and microparticles in an organic solvent. The I-V characteristics of a schottky diode solar cell consisting of a Si particle film and an Au-coated PET film showed rectifying behavior and photovoltaic effect. With the aim of improving the physical and electrical properties of the Si particle films, the laser sintering of the Si particle films was investigated by changing the wavelength of laser beam using CW DPSS lasers (457, 1064 nm). In the preparation of the Si particle film, organosilicon nanocluster (OrSi) and organogermanium nanocluster (OrGe) were used as a binder polymer. The structural changes of the Si particle by laser irradiation were studied by micro-Raman spectroscopy. The peak position of the Raman band remarkably depended on the laser wavelength. The IR laser (1064 nm) sintering with a large penetration depth gave the higher quality crystal Si film than that prepared by visible laser (457 nm) sintering judging from the shift of the LO and TO phonon band from 520 cm^-1 of single crystal Si.

Citation Download Citation

Akira Watanabe "Laser sintering of Si and Ge nano- and microparticle films toward solar cells by solution process", Proc. SPIE 8244, Laser-based Micro- and Nanopackaging and Assembly VI, 82440V (17 February 2012); https://doi.org/10.1117/12.906565

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