Paper
30 January 2012 Material specific effects and limitations during ps-laser generation of micro structures
J. Hildenhagen, U. Engelhardt, M. Smarra, K. Dickmann
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Abstract
The use of picosecond lasers for microstructuring, especially in the combination with scanner optics, leads to undesired effects with increasing ablation depths. The cavity edges slope to a degree ranging between 50° and 85°, depending on the material. With highly reflective substrates, ditches of up to 20% of their total depth can be formed on its ground structure. In certain materials also diverse substructures such as holes, canals, or grooves can be developed. These could impact the precision of the ablation geometry partially. A systematic study of the specific ablation characteristics is needed to achieve a defined depth of the structure. Considering a huge number of influential parameters, an automation of such measurements would be meaningful. For a study of eight different materials (high-alloy steels, copper, titanium, aluminum, PMMA, Al2O3 ceramics, silicon and fused quartz), an industrial ps-laser coupled with a chromatic sensor for distance measurement was used. Hence a direct acquisition of the generated structures as well as an automatic evaluation of the parameters is possible. Furthermore an online quality control and a local post processing can be implemented. In this way the generation of complex structures with a higher precision is possible.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Hildenhagen, U. Engelhardt, M. Smarra, and K. Dickmann "Material specific effects and limitations during ps-laser generation of micro structures", Proc. SPIE 8247, Frontiers in Ultrafast Optics: Biomedical, Scientific, and Industrial Applications XII, 824711 (30 January 2012); https://doi.org/10.1117/12.905948
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Cited by 2 scholarly publications.
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KEYWORDS
Laser ablation

Ceramics

Colorimetry

Picosecond phenomena

Pulsed laser operation

Sensors

Silicon

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