Paper
28 February 2012 Hybrid quantum well/quantum dot structures for broad spectral bandwidth devices
Siming Chen, Kejia Zhou, Ziyang Zhang, David T. D. Childs, Jonathan R. Orchard, Richard A. Hogg, Kenneth Kennedy, Max. Hughes
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Abstract
In this paper we report a hybrid quantum well (QW) and quantum dot (QD) structure to achieve a broad spontaneous emission and gain spectra. A single quantum well is introduced into a multi-layer stack of quantum dots, spectrally positioned to cancel the losses due to the second excited state of the dots. Attributed to the combined effect of QW and QDs, we show room temperature spontaneous emission with a 3dB bandwidth of ~250 nm and modal gain spanning over ~300 nm. We describe how this is achieved by careful design of the structure, balancing thermal emission from the QW and transport/capture processes in the QDs. We will also compare results from a QD-only epitaxial structure to describe how broadband gain/emission can be achieved in this new type of structure.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Siming Chen, Kejia Zhou, Ziyang Zhang, David T. D. Childs, Jonathan R. Orchard, Richard A. Hogg, Kenneth Kennedy, and Max. Hughes "Hybrid quantum well/quantum dot structures for broad spectral bandwidth devices", Proc. SPIE 8255, Physics and Simulation of Optoelectronic Devices XX, 82550E (28 February 2012); https://doi.org/10.1117/12.908494
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KEYWORDS
Quantum wells

Gallium arsenide

Electroluminescence

Quantum dots

Absorption

Electrons

Structural design

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