Translator Disclaimer
28 February 2012 Realization of a photonic crystal surface emitting laser through GaAs based regrowth
Author Affiliations +
Recently, there has been much interest in a novel type of device, the 2D photonic crystal surface emitting laser (PCSEL). For commercialization of these devices a robust and high reliability manufacturing method is required. Previous GaAs wafer fusion and GaN regrowth techniques have utilised voids within the photonic crystal which suffer from reliability and reproducibility issues. We demonstrate a GaAs based PCSEL structure which uses epitaxial regrowth to completely infill the etched structure. We discuss the design, epitaxy, and operating characteristics of these devices over a range of temperatures.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David M. Williams, Kristian M. Groom, David T. D. Childs, Ben J. Stevens, Salam Khamas, Tim S. Roberts, Richard J. E. Taylor, Richard A. Hogg, Naoki Ikeda, and Yoshimasa Sugimoto "Realization of a photonic crystal surface emitting laser through GaAs based regrowth", Proc. SPIE 8255, Physics and Simulation of Optoelectronic Devices XX, 82550Z (28 February 2012);


Blue shift of laser mode in photonic crystal microcavity
Proceedings of SPIE (December 03 2014)
Long-wavelength lasers using GaAs-based quantum dots
Proceedings of SPIE (August 01 2002)
High-power AlGaInN lasers for Blu-ray disc system
Proceedings of SPIE (July 03 2003)
High brilliance photonic band crystal lasers
Proceedings of SPIE (July 12 2006)

Back to Top