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20 February 2012 Nonlinear response of semiconductors driven by intense THz pulses
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Abstract
We present a review of our recent nonlinear spectroscopy experiments on bulk semiconductors performed using a novel source of ultra-intense multi-THz transients. The field-induced interband optical absorption in InP is studied on subcycle timescales. Our simulations corroborate the Franz-Keldysh effect as the main reason for the observed optical anomalies. The time-resolved four-wave mixing signals generated in InSb demonstrate clear signatures of a nonperturbative excitation regime and can be qualitatively reproduced by a simplified model of a two-level system driven far from the resonance.
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A. Pashkin, F. Junginger, C. Schmidt, B. Mayer, O. Schubert, S. Mährlein, R. Huber, and A. Leitenstorfer "Nonlinear response of semiconductors driven by intense THz pulses", Proc. SPIE 8260, Ultrafast Phenomena and Nanophotonics XVI, 82600M (20 February 2012); https://doi.org/10.1117/12.910002
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