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1 March 2012 Towards monolithically integrated CMOS cameras for active imaging with 600 GHz radiation
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Proceedings Volume 8261, Terahertz Technology and Applications V; 826106 (2012)
Event: SPIE OPTO, 2012, San Francisco, California, United States
We explore terahertz imaging with CMOS field-effect transistors exploiting their plasmonic detection capability and the advantages of CMOS technology for the fabrication of THz cameras with respect to process stability, array uniformity, ease of integration of additional functionality, scalability and cost-effectiveness. A 100×100-pixel camera with an active area of 20×20 mm² is physically simulated by scanning single detectors and groups of a few detectors in the image plane. Using detectors with a noise-equivalent power of 43 pW/√Hz, a distributed illumination of 432 μW at 591.4 GHz, and an integration time of 20 ms (for a possible frame rate of 17 fps), this virtual camera allows to obtain images with a dynamic range of at least 20 dB and a resolution approaching the diffraction limit. Imaging examples acquired in direct and heterodyne detection mode, and in transmission and reflection geometry, show the potential for real-time operation. It is demonstrated that heterodyning (i) improves the dynamic range substantially even if the radiation from the local oscillator is distributed over the camera area, and (ii) allows sensitive determination of object-induced phase changes, which promises the realization of coherent imaging systems.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sebastian Boppel, Alvydas Lisauskas, Viktor Krozer, and Hartmut G. Roskos "Towards monolithically integrated CMOS cameras for active imaging with 600 GHz radiation", Proc. SPIE 8261, Terahertz Technology and Applications V, 826106 (1 March 2012);


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