THz lasing in InAs/GaSb broken-gap heterostructure devices and quantum-dot pillar arrays

Dwight Woolard; Weidong Zhang

doi:10.1117/12.915985

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27 February 2012 THz lasing in InAs/GaSb broken-gap heterostructure devices and quantum-dot pillar arrays

Dwight Woolard, Weidong Zhang

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Proceedings Volume 8261, Terahertz Technology and Applications V; 82610B (2012) https://doi.org/10.1117/12.915985
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

A novel approach for the generation of THz radiation that utilizes "interband" transitions and tunneling processes occurring simultaneously within double-barrier (DB) GaSb/InAs/GaSb broken-gap (BG) resonant-tunneling-diodes (RTDs) is discussed. This paper focuses on the architectural and cavity designs for realizing TE polarized emission from single DB-BG-RTD devices and quantum-dot pillar arrays. Design techniques useful for mitigating CB drive current (& the associated thermal heating) while at the same time optimizing output power and power efficiency are discussed.

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Dwight Woolard and Weidong Zhang "THz lasing in InAs/GaSb broken-gap heterostructure devices and quantum-dot pillar arrays", Proc. SPIE 8261, Terahertz Technology and Applications V, 82610B (27 February 2012); https://doi.org/10.1117/12.915985

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