Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates

N. Izyumskaya; S. J. Liu; V. Avrutin; S. Okur; F. Zhang; Ü. Özgür; S. Metzner; C. Karbaum; F. Bertram; J. Christen; D. J. Smith; H. Morkoç

doi:10.1117/12.909235

27 February 2012 Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates

N. Izyumskaya, S. J. Liu, V. Avrutin, S. Okur, F. Zhang, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, D. J. Smith, H. Morkoç

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Proceedings Volume 8262, Gallium Nitride Materials and Devices VII; 826224 (2012) https://doi.org/10.1117/12.909235
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

Semipolar (1^-101) GaN layers were grown by metal-organic chemical vapor deposition on patterned (001) Si substrates. The effects of reactor pressure and substrate temperature on optical properties of (1^-101) GaN were studied by steadystate and time-resolved photoluminescence. The optical measurements revealed that the optical quality of (1^-101)- oriented GaN is comparable to that of c-plane GaN film grown on sapphire. Slow decay time constants, representative of the radiative recombination, for semipolar (1-101)GaN grown at 200 Torr are found to be very long (~1.8 ns), comparable to those for the state-of-art c-plane GaN templates grown using in situ epitaxial lateral overgrowth through silicon nitride nano-network. Defect distribution in the GaN stripes was studied by spatially resolved cathodeluminescence measurements. The c⁺-wing regions of the GaN stripes were found to be dominated by a (D⁰,X) emission. Only a thin slice of emission around 3.42 eV related to basal stacking faults was revealed in c^--wing regions.

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N. Izyumskaya, S. J. Liu, V. Avrutin, S. Okur, F. Zhang, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, D. J. Smith, and H. Morkoç "Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826224 (27 February 2012); https://doi.org/10.1117/12.909235

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