Paper
21 February 2012 Fourier-Bessel expansions of localized light in disorder dielectric lattices
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Abstract
It has been shown that light localization can occur within disordered and random dielectric lattices. The presence and nature of localized light within these dielectric layouts is examined through the rotational order symmetry present within both the field profile and the dielectric. A Fourier-Bessel expansion algorithm using exponentials and Bessel functions as basis functions is employed to decompose the dielectric layout and localized light field profiles. Selecting the coordinate origin for the expansion to coincide with the localized light's field center demonstrates that a relationship exists between the rotational order in the localized light and the dielectric layout.
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Scott R. Newman and Robert C. Gauthier "Fourier-Bessel expansions of localized light in disorder dielectric lattices", Proc. SPIE 8269, Photonic and Phononic Properties of Engineered Nanostructures II, 82690T (21 February 2012); https://doi.org/10.1117/12.908586
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Cited by 1 scholarly publication.
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KEYWORDS
Dielectrics

Finite-difference time-domain method

Photonic crystals

Bessel functions

Silicon

Fourier transforms

Scattering

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