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16 February 2012 VCSELs and silicon light sources exploiting SOI grating mirrors
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Proceedings Volume 8270, High Contrast Metastructures; 82700D (2012) https://doi.org/10.1117/12.908874
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
In this talk, novel vertical-cavity laser structure consisting of a dielectric Bragg reflector, a III-V active region, and a high-index-contrast grating made in the Si layer of a silicon-on-insulator (SOI) wafer will be presented. In the Si light source version of this laser structure, the SOI grating works as a highly-reflective mirror as well as routes light into a Si in-plane output waveguide connected to the grating. In the vertical-cavity surface-emitting laser (VCSEL) version, there is no in-plane output waveguide connected to the grating. Thus, light is vertically emitted through the Bragg reflector. Numerical simulations show that both the silicon light source and the VCSEL exploiting SOI grating mirrors have superior performances, compared to existing silicon light sources and long wavelength VCSELs. These devices are highly adequate for chip-level optical interconnects as well as conventional short-distance optical connections. In the talk, device physics will be discussed in detail.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Il-Sug Chung and Jesper Mørk "VCSELs and silicon light sources exploiting SOI grating mirrors", Proc. SPIE 8270, High Contrast Metastructures, 82700D (16 February 2012); https://doi.org/10.1117/12.908874
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