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8 February 2012 830nm high power single mode DFB laser for high volume applications
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Proceedings Volume 8277, Novel In-Plane Semiconductor Lasers XI; 82770A (2012) https://doi.org/10.1117/12.910238
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
We report an 830nm high power single spatial mode DFB laser design in the AlGaAs/GaAs system that offers performance close to a Fabry-Perot design as well as manufacturing yield compatible with volume production. Single-mode power in excess of 200mW at case temperature up to 600C is consistently obtained for current below 300mA. This performance level is enabled by use of an efficient, partially-corrugated design and a 2nd order grating located on the p-side. Through careful design and an optimized epitaxial re-growth on the grating, promising reliability results compatible with uncooled application are demonstrated.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pierre Doussiere, Mark Tashima, Hery Djie, Kong Weng Lee, Vince Wong, David Venables, Victor Rossin, and Erik Zucker "830nm high power single mode DFB laser for high volume applications", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82770A (8 February 2012); https://doi.org/10.1117/12.910238
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