Paper
8 February 2012 Long-wavelength quantum dot FP and DFB lasers for high temperature applications
T. Kageyama, K. Takada, K. Nishi, M. Yamaguchi, R. Mochida, Y. Maeda, H. Kondo, K. Takemasa, Y. Tanaka, T. Yamamoto, M. Sugawara, Y. Arakawa
Author Affiliations +
Proceedings Volume 8277, Novel In-Plane Semiconductor Lasers XI; 82770C (2012) https://doi.org/10.1117/12.905873
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
High temperature (>125°C) resistant long-wavelength semiconductor lasers are attractive as light sources in a variety of harsh environments. Here, we report extremely high temperature continuous-wave (CW) operation of QD lasers on GaAs substrate emitted at 1300-nm-range by enhancing gain and increasing the quantized-energy separation of the QD active layers. A suppression of the In out-diffusion during MBE from self-assembled InAs QDs significantly reduced inhomogeneous broadening with high QD sheet density maintained. QD-FP laser exhibited record high CW-lasing temperature for long-wavelength laser of 220°C and QD-DFB laser also exhibited high CW-lasing temperature of 150°C by employing high gain QD active media.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Kageyama, K. Takada, K. Nishi, M. Yamaguchi, R. Mochida, Y. Maeda, H. Kondo, K. Takemasa, Y. Tanaka, T. Yamamoto, M. Sugawara, and Y. Arakawa "Long-wavelength quantum dot FP and DFB lasers for high temperature applications", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82770C (8 February 2012); https://doi.org/10.1117/12.905873
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Cited by 7 scholarly publications.
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KEYWORDS
Semiconductor lasers

Continuous wave operation

Laser applications

Semiconducting wafers

Gallium arsenide

Laser development

Quantum dots

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