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8 February 2012Tapered active-region, mid-infrared quantum cascade lasers for
complete suppression of carrier-leakage currents
A new deep-well (DW) quantum-cascade laser (QCL) design: Tapered Active-Region (TA), for which the barrier layers
in each active region are tapered such that their conduction band edges increase in energy from the injection barrier to
the exit barrier, causes a significant increase in the energy difference between the upper laser level and the next higher
energy level, E54; thus, resulting in further carrier-leakage suppression compared to DW QCLs. High E54 values (80 -100
meV) are primarily obtained because the energy separation between the first excited states of a pair of coupled QWs
(CQWs) is larger when the CQWs are asymmetric than when they are symmetric. Then, we reach an optimized TA-QCL
design (λ= 4.7 μm) for which E54 values as high as 99 meV are obtained, while insuring good carrier depopulation of the
lower laser level (i.e., τ3 = 0.2 ps) via the double-phonon-resonance scheme. In addition, the upper-laser-level lifetime
increases by ~ 15 % compared to that for conventional QCLs. As a result, the relative carrier leakage decreases to values
≤ 1% and the room-temperature (RT) threshold-current density decreases by ~ 25 % compared to that for conventional
QCLs. Then, we estimate that single-facet, continuous-wave (CW) RT wallplug-efficiency values as high as 27 % are
possible. Preliminary results from TA QCLs include T0 and T1 values as high as 231 K and 797 K, respectively, over the
20-60 °C heatsink-temperature range.
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Dan Botez, Jae Cheol Shin, Jeremy Daniel Kirch, Chun-Chieh Chang, Luke James Mawst, Thomas Earles, "Tapered active-region, mid-infrared quantum cascade lasers for complete suppression of carrier-leakage currents," Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82770W (8 February 2012); https://doi.org/10.1117/12.907439