High-power operation of a wide-striped InGaN laser diode array

Katsuya Samonji; Shinji Yoshida; Hiroyuki Hagino; Kazuhiko Yamanaka; Shinichi Takigawa

doi:10.1117/12.907936

8 February 2012 High-power operation of a wide-striped InGaN laser diode array

Katsuya Samonji, Shinji Yoshida, Hiroyuki Hagino, Kazuhiko Yamanaka, Shinichi Takigawa

Proceedings Volume 8277, Novel In-Plane Semiconductor Lasers XI; 82771K (2012) https://doi.org/10.1117/12.907936
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

We successfully demonstrated a multi-striped InGaN-based laser diode (LD) array with an optical output power of 6.3 W under continuous wave operation. The LD array was operated on a conventional metal package without any cooling system. The world highest power operation as InGaN LD array is attributed to thermally optimized layout design taking advantage of highly efficient wide-striped emitters.

Citation Download Citation

Katsuya Samonji, Shinji Yoshida, Hiroyuki Hagino, Kazuhiko Yamanaka, and Shinichi Takigawa "High-power operation of a wide-striped InGaN laser diode array", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771K (8 February 2012); https://doi.org/10.1117/12.907936

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