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16 February 2012 Diffusion dark current in front-illuminated CCDs and CMOS image sensors
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Proceedings Volume 8298, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII; 829809 (2012) https://doi.org/10.1117/12.920463
Event: IS&T/SPIE Electronic Imaging, 2012, Burlingame, California, United States
Abstract
The dark current that arises due to diffusion from the bulk is assuming a more important role now that CCD and CMOS image sensors have found their way into consumer electronics which must be capable of operating at elevated temperatures. Historically this component has been estimated from the diffusion related current of a diode with an infinite substrate. This paper explores the effect of a substrate of finite extent beneath the collecting volume of the pixel for a front-illuminated device and develops a corrected expression for the diffusion related dark current. The models show that the diffusion dark current can be much less than that predicted by the standard model.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. M. Blouke "Diffusion dark current in front-illuminated CCDs and CMOS image sensors", Proc. SPIE 8298, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII, 829809 (16 February 2012); https://doi.org/10.1117/12.920463
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