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15 February 2012 Photodiode dopant structure with atomically flat Si surface for high-sensitivity and stability to UV light
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Proceedings Volume 8298, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII; 82980M (2012) https://doi.org/10.1117/12.907727
Event: IS&T/SPIE Electronic Imaging, 2012, Burlingame, California, United States
Abstract
In this work, n+pn-type photodiodes with various surface n+ layer profiles formed on the atomically flat Si surface were evaluated to investigate the relationships between the surface photo-generated carrier drift layer dopant profiles with a high uniformity and sensitivity and stability to UV-light. The degradation mechanism of photodiode sensitivitiy in UVlight wavelength due to UV-light exposure is explained by the changes in the fixed charges and the interface states at Si/SiO2 system above photodiode. Finally, a design strategy of photodiode dopant profile to achieve a high sensitivity and a high stability to UV-light is proposed.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Taiki Nakazawa, Rihito Kuroda, Yasumasa Koda, and Shigetoshi Sugawa "Photodiode dopant structure with atomically flat Si surface for high-sensitivity and stability to UV light", Proc. SPIE 8298, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII, 82980M (15 February 2012); https://doi.org/10.1117/12.907727
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