Paper
28 November 2011 A 1550 nm PbS semiconductor quantum dots fiber amplifier based on SiO2 sol-gel method
Author Affiliations +
Proceedings Volume 8308, Optoelectronic Materials and Devices VI; 83080M (2011) https://doi.org/10.1117/12.904469
Event: SPIE/OSA/IEEE Asia Communications and Photonics, 2011, Shanghai, China
Abstract
A novel PbS quantum dots (QDs) fiber amplifier based on SiO2 Sol-Gel method was proposed. The QDs doped SiO2 films was deposited onto a fused tapered fiber coupler based on standard single mode fiber (SMF). With a 980 nm wavelength laser diode (LD) as the pump, 1550 nm signal and 980 nm pump light waves were injected into the tapered region simultaneously, through the evanescent wave, we obtained the gain at 1576 nm wavelength as high as 5 dB. The proposed fiber amplififier can implement the property of a small, integrated, high output, low noise, high gain, low cost, which meet the need of the future of optical fiber communication system.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaolan Sun, Chao Li, Libin Xie, Xiaohong Liu, and Yanhua Dong "A 1550 nm PbS semiconductor quantum dots fiber amplifier based on SiO2 sol-gel method", Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83080M (28 November 2011); https://doi.org/10.1117/12.904469
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KEYWORDS
Lead

Fiber amplifiers

Quantum dots

Silica

Optical amplifiers

Sol-gels

Semiconductors

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