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28 November 2011 Optical properties of GaN/AlN quantum dots under intense laser field
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Proceedings Volume 8308, Optoelectronic Materials and Devices VI; 830813 (2011) https://doi.org/10.1117/12.904092
Event: SPIE/OSA/IEEE Asia Communications and Photonics, 2011, Shanghai, China
Abstract
We investigate the influence of intense laser field on the energy state and optical properties induced by sublevels transition of quantum dot. The quantum system includes the piezoelectric effect that rarely mentioned in related references. The linear, nonlinear and total optical properties for two cases with different quantum dot radius are examined. The peak positions and the peak amplitudes of spectra change drastically due to different size of quantum dot.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lu Zhang, Zhongyuan Yu, Wenjie Yao, Yumin Liu, and Hao Feng "Optical properties of GaN/AlN quantum dots under intense laser field", Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 830813 (28 November 2011); https://doi.org/10.1117/12.904092
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