Low-voltage, high-extinction ratio carrier-depletion Mach-Zehnder silicon optical modulator

Jianfeng Ding; Hongtao Chen; Ruiqiang Ji; Lin Yang; Yonghui Tian; Lei Zhang; Weiwei Zhu; Yangyang Lu; Rui Min; Ping Zhou

doi:10.1117/12.917997

28 November 2011 Low-voltage, high-extinction ratio carrier-depletion Mach-Zehnder silicon optical modulator

Jianfeng Ding, Hongtao Chen, Ruiqiang Ji, Lin Yang, Yonghui Tian, Lei Zhang, Weiwei Zhu, Yangyang Lu, Rui Min, Ping Zhou

Author Affiliations +

Proceedings Volume 8308, Optoelectronic Materials and Devices VI; 83081P (2011) https://doi.org/10.1117/12.917997
Event: SPIE/OSA/IEEE Asia Communications and Photonics, 2011, Shanghai, China

Abstract

As a result of the low modulation efficiency of carrier-depletion Mach-Zehnder silicon optical modulator, it always needs a high voltage around 6 V, which is very difficult to supply in an integrated high-speed CMOS chip. We demonstrate a carrier-depletion Mach-Zehnder silicon optical modulator which works at a low voltage. Its coplanar waveguide electrode is carefully designed to make sure the electrical wave loss along the device is low. The device operates well at a data rate of 12.5 Gb/s, whose phase-shifter length is 2 mm. Voltages with the swinging amplitudes being 1 V and 2 V are applied to the device with the reverse bias voltages of 0.5 V and 0.8 V. The extinction ratios are 7.67 and 12.79 dB respectively.

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Jianfeng Ding, Hongtao Chen, Ruiqiang Ji, Lin Yang, Yonghui Tian, Lei Zhang, Weiwei Zhu, Yangyang Lu, Rui Min, and Ping Zhou "Low-voltage, high-extinction ratio carrier-depletion Mach-Zehnder silicon optical modulator", Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83081P (28 November 2011); https://doi.org/10.1117/12.917997

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