Microscopic study on the carrier distribution in optoelectronic device structures: experiment and modeling

Wenchao Huang; Hui Xia; Shaowei Wang; Honghai Deng; Peng Wei; Lu Li; Fengqi Liu; Zhifeng Li; Tianxin Li

doi:10.1117/12.904389

28 November 2011 Microscopic study on the carrier distribution in optoelectronic device structures: experiment and modeling

Wenchao Huang, Hui Xia, Shaowei Wang, Honghai Deng, Peng Wei, Lu Li, Fengqi Liu, Zhifeng Li, Tianxin Li

Author Affiliations +

Proceedings Volume 8308, Optoelectronic Materials and Devices VI; 83081Y (2011) https://doi.org/10.1117/12.904389
Event: SPIE/OSA/IEEE Asia Communications and Photonics, 2011, Shanghai, China

Abstract

Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) both are capable of mapping the 2-demensional carrier distribution in semiconductor device structures, which is essential in determining their electrical and optoelectronic performances. In this work, cross-sectional SCM^1,2 is used to study the InGaAs/InP P-i-N junctions prepared by area-selective p-type diffusion. The diffusion lengths in the depth as well as the lateral directions are obtained for junctions under different window sizes in mask, which imply that narrow windows may result in shallow p-n junctions. The analysis is beneficial to design and fabricate focal plane array of near infrared photodetectors with high duty-cycle and quantum efficiency. On the other hand, SSRM provides unparalleled spatial resolution (<10 nm) in electrical characterization³ that is demanded for studying low-dimensional structures. However, to derive the carrier density from the measured local conductance in individual quantum structures, reliable model for SSRM is necessary but still not well established. Based on the carrier concentration related transport mechanisms, i.e. thermionic emission and thermionic field emission^4,5, we developed a numerical model for the tip-sample Schottky contact⁴. The calculation is confronted with SSRM study on the dose-calibrated quantum wells (QWs).

Citation Download Citation

Wenchao Huang, Hui Xia, Shaowei Wang, Honghai Deng, Peng Wei, Lu Li, Fengqi Liu, Zhifeng Li, and Tianxin Li "Microscopic study on the carrier distribution in optoelectronic device structures: experiment and modeling", Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83081Y (28 November 2011); https://doi.org/10.1117/12.904389

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
7 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Particle filters

Diffusion

Quantum wells

Microscopy

Optoelectronic devices

Photodetectors

Resistance

Show All Keywords

Keywords/Phrases

Search In:

Publication Years