Insertion strategy for EUV lithography

Obert Wood; John Arnold; Timothy Brunner; Martin Burkhardt; James H.-C. Chen; Deniz Civay; Susan S.-C. Fan; Emily Gallagher; Scott Halle; Ming He; Craig Higgins; Hirokazu Kato; Jongwook Kye; Chiew-Seng Koay; Guillaume Landie; Pak Leung; Gregory McIntyre; Satoshi Nagai; Karen Petrillo; Sudhar Raghunathan; Ralph Schlief; Lei Sun; Alfred Wagner; Tom Wallow; Yunpeng Yin; Xuelian Zhu; Matthew Colburn; Daniel Corliss; Cecilia Smolinski

doi:10.1117/12.916292

13 March 2012 Insertion strategy for EUV lithography

Obert Wood, John Arnold, Timothy Brunner, Martin Burkhardt, James H.-C. Chen, Deniz Civay, Susan S.-C. Fan, Emily Gallagher, Scott Halle, Ming He, Craig Higgins, Hirokazu Kato, Jongwook Kye, Chiew-Seng Koay, Guillaume Landie, Pak Leung, Gregory McIntyre, Satoshi Nagai, Karen Petrillo, Sudhar Raghunathan, Ralph Schlief, Lei Sun, Alfred Wagner, Tom Wallow, Yunpeng Yin, Xuelian Zhu, Matthew Colburn, Daniel Corliss, Cecilia Smolinski

Author Affiliations +

Proceedings Volume 8322, Extreme Ultraviolet (EUV) Lithography III; 832203 (2012) https://doi.org/10.1117/12.916292
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

The first use of extreme ultraviolet (EUV) lithography in logic manufacturing is targeted for the 14 nm node, with possible earlier application to 20-nm node logic device back-end layers to demonstrate the technology. Use of EUV lithography to pattern the via-levels will allow the use of dark-field EUV masks with low pattern densities and will postpone the day when completely defect-free EUV mask blanks are needed. The quality of the imaging at the 14 nm node with EUV lithography is considerably higher than with double-dipole or double-exposure double-etch 193-nm immersion lithography, particularly for 2-dimensional patterns such as vias, because the Rayleigh k₁-value when printing with 0.25 numerical aperture (NA) EUV lithography is so much higher than with 1.35 NA 193-nm immersion lithography and the process windows with EUV lithography are huge. In this paper, the status of EUV lithography technology as seen from an end-user perspective is summarized and the current values of the most important metrics for each of the critical elements of the technology are compared to the values needed for the insertion of EUVL into production at the 14 nm technology node.

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Obert Wood, John Arnold, Timothy Brunner, Martin Burkhardt, James H.-C. Chen, Deniz Civay, Susan S.-C. Fan, Emily Gallagher, Scott Halle, Ming He, Craig Higgins, Hirokazu Kato, Jongwook Kye, Chiew-Seng Koay, Guillaume Landie, Pak Leung, Gregory McIntyre, Satoshi Nagai, Karen Petrillo, Sudhar Raghunathan, Ralph Schlief, Lei Sun, Alfred Wagner, Tom Wallow, Yunpeng Yin, Xuelian Zhu, Matthew Colburn, Daniel Corliss, and Cecilia Smolinski "Insertion strategy for EUV lithography", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 832203 (13 March 2012); https://doi.org/10.1117/12.916292

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