Paper
20 March 2012 Modeling and simulation of acid diffusion in chemically amplified resists with polymer-bound acid generator
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Abstract
The chemically amplified resist with a polymer-bound acid generator is a promising material for 16 nm node and beyond. However, its reaction mechanism is unknown. In this study, we propose a proton diffusion model for the chemically amplified resist with a polymer-bound acid generator. To examine the proton diffusion model, we carried out patterning experiments and simulation. The calculated latent images were compared with the measured line width and line edge roughness. The reaction mechanisms of the chemically amplified resist with a polymer-bound resist is discussed.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takahiro Kozawa, Julius Joseph Santillan, and Toshiro Itani "Modeling and simulation of acid diffusion in chemically amplified resists with polymer-bound acid generator", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 832206 (20 March 2012); https://doi.org/10.1117/12.916293
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Diffusion

Chemically amplified resists

Polymers

Line edge roughness

Extreme ultraviolet

Chemical analysis

Monte Carlo methods

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