You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
22 March 2012Closing the infrastructure gap: status of the AIMS EUV project
The EUV mask infrastructure is of key importance for a successful introduction of EUV lithography into volume
production. In particular, for the production of defect free masks an actinic review of potential defect sites is required.
With such a review it can be decided if a defect needs to be repaired or compensated. It also serves as verification
whether the respective absorber or compensational repair with e.g. the MeRiT® tool has been successful, i.e. it closes the
control loop in mask repair. To realize such an actinic review tool, Carl Zeiss and the SEMATECH EUVL Mask
Infrastructure consortium started a development programme for an EUV aerial image metrology system (AIMS™ EUV).
In this paper, we discuss the application of the AIMS™ EUV in the compensational repair process of multilayer and
blank defects and present the status of the AIMS™ EUV project.
The alert did not successfully save. Please try again later.
Dirk Hellweg, Markus Weiss, Sascha Perlitz, Jan Hendrik Peters, Wolfgang Harnisch, Michael Goldstein, "Closing the infrastructure gap: status of the AIMS EUV project," Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83220L (22 March 2012); https://doi.org/10.1117/12.918691