Paper
22 March 2012 Using the transport of intensity equation to predict mask-induced speckle through focus
Brittany M. McClinton, Patrick P. Naulleau
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Abstract
The shrinking critical dimensions in the semiconductor industry carries with it simultaneous shrinking requirements on line-edge roughness (LER). With the employment of extreme ultraviolet lithography (EUVL), a significant new contributor to LER is apparent in the form of mask roughness induced LER. Several simplified models have been developed for the prediction of mask roughness induced LER. Currently, these models use 2D aerial image thin-mask modeling through focus to obtain the clearfield speckle pattern (dependent on mask surface roughness and illumination), and combine that with fast 1D aerial image modeling of the image-log-slope (ILS) (dependent on feature type and illumination) to predict the overall mask roughness induced LER. We propose a further simplification and speed enhancement by employing the transport of intensity equation to predict how the speckle pattern will evolve through focus starting from the single 2D aerial image of the speckle at the image-plane.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brittany M. McClinton and Patrick P. Naulleau "Using the transport of intensity equation to predict mask-induced speckle through focus", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83220P (22 March 2012); https://doi.org/10.1117/12.917785
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KEYWORDS
Speckle pattern

Photomasks

Speckle

Line edge roughness

Extreme ultraviolet lithography

3D modeling

Extreme ultraviolet

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