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23 March 2012 Key parameters of EUV resists for contact hole applications
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Patterning contact hole (CH) features with good critical dimension uniformity (CDU) is one of the most critical challenges for 10nm node lithography and beyond. Extreme ultraviolet lithography (EUVL) is considered a potential candidate because of its better aerial imaging and larger k1 factor than ArF immersion. To apply EUV lithography to high volume manufacturing, EUV resists must overcome both the trade-off among resolution (R), local CD uniformity (LCDU), and sensitivity (S) at CH features and the RLS trade-off at line/space (LS) features. We evaluated various resist materials for CH patterning applications using the microexposure tools (METs) at SEMATECH in Albany, NY, and at Lawrence Berkeley National Laboratory. In this study, we report the correlation between the lithographic performance of EUV resist at CH features and physical properties of chemically amplified resists (CARs) such as their dissolution behavior, the activation energy level of the protective group, and the acidity/acid diffusion length of the photoacid generator (PAG).
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kyoungyong Cho, Hiroki Nakagawa, Ken Maruyama, Makoto Shimizu, Tooru Kimura, and Yoshi Hishiro "Key parameters of EUV resists for contact hole applications", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83221B (23 March 2012);

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