Particle contamination effects in EUVL: enhanced theory for the analytical determination of critical particle sizes

Gerd Brandstetter; Sanjay Govindjee

doi:10.1117/12.916539

23 March 2012 Particle contamination effects in EUVL: enhanced theory for the analytical determination of critical particle sizes

Gerd Brandstetter, Sanjay Govindjee

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Proceedings Volume 8322, Extreme Ultraviolet (EUV) Lithography III; 83221V (2012) https://doi.org/10.1117/12.916539
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Existing analytical and numerical methodologies are discussed and then extended in order to calculate critical contamination-particle sizes, which will result in deleterious effects during EUVL E-chucking in the face of an error budget on the image-placement-error (IPE). The enhanced analytical models include a gap dependant clamping pressure formulation, the consideration of a general material law for realistic particle crushing and the influence of frictional contact. We present a discussion of the defects of the classical de-coupled modeling approach where particle crushing and mask/chuck indentation are separated from the global computation of mask bending. To repair this defect we present a new analytic approach based on an exact Hankel transform method which allows a fully coupled solution. This will capture the contribution of the mask indentation to the image-placement-error (estimated IPE increase of 20%). A fully coupled finite element model is used to validate the analytical models and to further investigate the impact of a mask back-side CrN-layer. The models are applied to existing experimental data with good agreement. For a standard material combination, a given IPE tolerance of 1 nm and a 15 kPa closing pressure, we derive bounds for single particles of cylindrical shape (radius × height < 44 μm) and spherical shape (diameter < 12 μm).

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Gerd Brandstetter and Sanjay Govindjee "Particle contamination effects in EUVL: enhanced theory for the analytical determination of critical particle sizes", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83221V (23 March 2012); https://doi.org/10.1117/12.916539

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KEYWORDS

Particles

Reticles

Photomasks

Data modeling

Spherical lenses

Extreme ultraviolet lithography

Finite element methods

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