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23 March 2012 Coat-develop track process for inorganic EUV resist
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A baseline coat-develop track process has been established for inorganic EUV resists. Inorganic EUV resists have already been highlighted for their higher resolution and lower Line-Width-Roughness (LWR) for lithography features as well as strong etch resistance [1], [2], [3], [4]. This inorganic resist system is not only interesting due to lithography process capability but also do to its influences on coat-develop track processing. It is understood that this inorganic resist system is dissolved in an aqueous solution and therefore has the different characteristics compared to typical polymer photoresist in organic solvent. Spin coating this aqueous resist solution leads to several challenges beyond the traditional aqueous Top Anti-Reflective Coat (TARC) materials used decades ago. Resist spin coating systems have continuously improved over the years based on polymer photoresists, therefore it becomes necessary to confirm if the latest coat module design and processes are equally applicable to aqueous resists targeted for EUV lithography. Another characteristic of this inorganic system it is not a chemical amplified resist. Post-Applied Bake (PAB), Post-Exposure Bake (PEB) and develop processes are compared with current polymer photoresist process. In this study, a coat-develop track process baseline is established for metrics such as film thickness uniformity, critical dimension (CD) uniformity and process defectivity. Based on this baseline data areas for improvement in coat-develop track process are identified to enable inorganic resist transition to volume production with EUV or E-Beam lithography.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masahiko Harumoto, Tadashi Miyagi, Koji Kaneyama, Akihiko Morita, Charles Pieczulewski, Masaya Asai, and Benjamin Clark "Coat-develop track process for inorganic EUV resist", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83222C (23 March 2012);

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