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23 March 2012 EUV assist layers for use in multilayer processes
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Extreme ultraviolet (EUV) exposure is among the front-runners for single-exposure lithography for the 16-nm node and below. Previous work has shown that assist layers are critical for performing EUV lithography. Assist layers enhance the adhesion of EUV photoresists, block substrate contamination, and improve the resolution, line width roughness, and sensitivity (RLS) trade-off. As we progress from development to manufacturing, materials must mature to align with industry needs. To bring devices produced using EUV lithography to reality, a trilayer process is the best and most flexible option. The requirements for a trilayer process include utilizing assist layers with a good etch selectivity to the carbon-rich etch transfer layer (ETL) and to the photoresist coupled with good RLS performance. In this paper, we report the study of new assist layers made with novel resins that have shown superior lithography performance, as well as high etch selectivity to both the ETL and the photoresist. We have demonstrated how to significantly improve the lithography with the benefits of the pattern transfer requirements for trilayer processing.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tantiboro Ouattara, Carlton Washburn, Aline Collin, Vandana Krishnamurthy, Douglas Guerrero, and Michael Weigand "EUV assist layers for use in multilayer processes", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83222E (23 March 2012);

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