Comparison of EUV and e-beam lithographic technologies for sub-22-nm node patterning

James Cameron; Jim Thackeray; Jin Wuk Sung; Suzanne M. Coley; Vipul Jain; Owendi Ongayi; Mike D. Wagner; Paul LaBeaume; Amy Kwok; David Valeri; Marie Hellion; Béatrice Icard; Bernard Dal'zotto; Claire Sourd; Laurent Pain

doi:10.1117/12.916598

23 March 2012 Comparison of EUV and e-beam lithographic technologies for sub-22-nm node patterning

James Cameron, Jim Thackeray, Jin Wuk Sung, Suzanne M. Coley, Vipul Jain, Owendi Ongayi, Mike D. Wagner, Paul LaBeaume, Amy Kwok, David Valeri, Marie Hellion, Béatrice Icard, Bernard Dal'zotto, Claire Sourd, Laurent Pain

Author Affiliations +

Proceedings Volume 8322, Extreme Ultraviolet (EUV) Lithography III; 83222F (2012) https://doi.org/10.1117/12.916598
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Prompted by the fact that the International Technology Roadmap for Semiconductors (ITRS) has declared no proven optical solutions are available for sub 22nm hp patterning, we have investigated e-Beam and Extreme Ultraviolet (EUV) resist performance with a view to High Volume Manufacturing (HVM) at these design rules. Since these patterning technologies are considered the leading candidates to replace Immersion ArF (ArFi) multilevel patterning schemes, it was deemed prudent to assess the readiness of these imaging options. We review the advantages and disadvantages of each patterning method and highlight general technology challenges as well as resist specific challenges. In terms of resist specific challenges, we primarily focus on Resolution, Linewidth roughness and Sensitivity (RLS) tradeoffs for both e-Beam and EUV patterning. These metrics are of particular relevance as the industry continues to contend with the well known tradeoffs between these performance criteria. The RLS relationship is probed for both line space and contact hole patterns with each exposure wavelength. In terms of resist selection, we focus on our advanced Polymer Bound PAG (PBP) resist platform as it has been designed for high resolution applications. We also assess resist outgassing during EUV exposure as it is a potential barrier to adoption of EUV for HVM.

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James Cameron, Jim Thackeray, Jin Wuk Sung, Suzanne M. Coley, Vipul Jain, Owendi Ongayi, Mike D. Wagner, Paul LaBeaume, Amy Kwok, David Valeri, Marie Hellion, Béatrice Icard, Bernard Dal'zotto, Claire Sourd, and Laurent Pain "Comparison of EUV and e-beam lithographic technologies for sub-22-nm node patterning", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83222F (23 March 2012); https://doi.org/10.1117/12.916598

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