Line width roughness control for EUV patterning

Karen Petrillo; George Huang; Dominic Ashworth; Liping Ren; K.-Y. Cho; Stefan Wurm; Shinichiro Kawakami; Lior Huli; Shannon Dunn; Akiteru Ko

doi:10.1117/12.925442

23 March 2012 Line width roughness control for EUV patterning

Karen Petrillo, George Huang, Dominic Ashworth, Liping Ren, K.-Y. Cho, Stefan Wurm, Shinichiro Kawakami, Lior Huli, Shannon Dunn, Akiteru Ko

Author Affiliations +

Proceedings Volume 8322, Extreme Ultraviolet (EUV) Lithography III; 83222H (2012) https://doi.org/10.1117/12.925442
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Controlling line width roughness (LWR) is a critical issue in extreme ultraviolet lithography (EUVL). High sensitivity, high resolution, and low LWR are required for EUV lithography resist. However, simultaneously achieving optimal properties through chemical tuning alone is difficult. The track process is one of the factors that impacts LWR. Enhancing track processes in EUV lithography is thus critical to controlling LWR. This paper describes an approach to mitigating LWR based on optimizing track-based and etch-based processes. It also presents the results of our newly developed track-based smoothing process as well as the results of combining several track-based techniques. The latest LWR performance from using track-based techniques, optimized track processes, and etch-based techniques will be highlighted.

Citation Download Citation

Karen Petrillo, George Huang, Dominic Ashworth, Liping Ren, K.-Y. Cho, Stefan Wurm, Shinichiro Kawakami, Lior Huli, Shannon Dunn, and Akiteru Ko "Line width roughness control for EUV patterning", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83222H (23 March 2012); https://doi.org/10.1117/12.925442

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