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23 March 2012 Modeling the ion beam target interaction to reduce defects generated by ion beam deposition
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Abstract
The defectivity of extreme ultraviolet (EUV) mask blanks is a critical issue in EUV lithography. It has been observed that target surfaces can develop many formations that generate defects during ion beam sputtering. Two simulation models were developed to study the surface morphology and evolution of a target surface under different ion beam conditions. Extensive simulations were performed to understand the interaction of the ion beam with the target surface. The modeling was able to mimic the growth and the elimination of these formations through normal incidence bombardment as verified by ion beam sputtering experiments.
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Thomas Cardinal, Daniel Andruczyk, He Yu, Vibhu Jindal, Patrick Kearney, and David N. Ruzic "Modeling the ion beam target interaction to reduce defects generated by ion beam deposition", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83222Q (23 March 2012); https://doi.org/10.1117/12.916878
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