Influence of thermal load on 450 mm Si-wafer IPD during lithographic patterning

Thomas Peschel; Gerhard Kalkowski; Ramona Eberhardt

doi:10.1117/12.916616

21 March 2012 Influence of thermal load on 450 mm Si-wafer IPD during lithographic patterning

Thomas Peschel, Gerhard Kalkowski, Ramona Eberhardt

Proceedings Volume 8323, Alternative Lithographic Technologies IV; 83230J (2012) https://doi.org/10.1117/12.916616
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

We report on Finite Element Modeling (FEM) of the influence of heat load due to the lithographic exposure on the inplane distortion (IPD) of 450 mm Si-wafers and hence on the effect of the heat load on the achievable image placement accuracy. Based on a scenario of electron beam writing at an exposure power of 20 mW, the thermo-mechanical behavior of the chuck and the attached Si wafer is modeled and used to derive corresponding IPD values. To account for the pin structured chuck surface, an effective layer model is derived. Different materials for the wafer chuck are compared with respect to their influence on wafer IPD and thermal characteristics of the exposure process. Guidelines for the selection of the chuck material und suggestions for its cooling and corrective strategies on e-beam steering during exposure are derived.

Citation Download Citation

Thomas Peschel, Gerhard Kalkowski, and Ramona Eberhardt "Influence of thermal load on 450 mm Si-wafer IPD during lithographic patterning", Proc. SPIE 8323, Alternative Lithographic Technologies IV, 83230J (21 March 2012); https://doi.org/10.1117/12.916616

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