Paper
21 March 2012 Progress towards the integration of optical proximity correction and directed self-assembly of block copolymers with graphoepitaxy
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Abstract
A photomask design flow for generating guiding patterns used in graphoepitaxial DSA processes is proposed and tested. In this flow, a new fast DSA model is employed for DSA structure verification. The execution speed and accuracy of the fast model were benchmarked with our previously reported Monte Carlo method. We demonstrated the process window verification using the OPC/DSA flow with the fast DSA model and compared this with experimental results in the guiding patterns simulated by e-beam lithography.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chi-Chun Liu, Jed Pitera, Neal Lafferty, Kafai Lai, Charles Rettner, Melia Tjio, Noel Arellano, and Joy Cheng "Progress towards the integration of optical proximity correction and directed self-assembly of block copolymers with graphoepitaxy", Proc. SPIE 8323, Alternative Lithographic Technologies IV, 83230X (21 March 2012); https://doi.org/10.1117/12.916525
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CITATIONS
Cited by 17 scholarly publications and 5 patents.
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KEYWORDS
Directed self assembly

Performance modeling

Monte Carlo methods

Optical proximity correction

Photomasks

3D modeling

Lithography

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