Apply multiple target for advanced gate ADI critical dimension measurement by scatterometry technology

Wei-Jhe Tzai; Howard Chen; Yu-Hao Huang; Chun-Chi Yu; Ching-Hung Bert Lin; Shi-Ming Jeremy Wei; Zhi-Qing James Xu; Sungchul Yoo; Chien-Jen Eros Huang; Chao-Yu Harvey Cheng; Juli Cheng; Lanny Mihardja; Houssam Chouaib

doi:10.1117/12.916234

5 April 2012 Apply multiple target for advanced gate ADI critical dimension measurement by scatterometry technology

Wei-Jhe Tzai, Howard Chen, Yu-Hao Huang, Chun-Chi Yu, Ching-Hung Bert Lin, Shi-Ming Jeremy Wei, Zhi-Qing James Xu, Sungchul Yoo, Chien-Jen Eros Huang, Chao-Yu Harvey Cheng, Juli Cheng, Lanny Mihardja, Houssam Chouaib

Author Affiliations +

Proceedings Volume 8324, Metrology, Inspection, and Process Control for Microlithography XXVI; 832420 (2012) https://doi.org/10.1117/12.916234
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Scatterometry-based metrology measurements for advanced gate after-develop inspection (ADI) and after-etch inspection (AEI) structures have been well proven¹. This paper discusses the metrology challenges encountered in implementing a production-worthy methodology for accurately measuring gate ADI middle CD (MCD) and sidewall angle (SWA) to monitor focus and exposure dose. A Multi-Target Measurement (MTM) methodology on KLA-Tencor's SpectraShape 8810 was evaluated on its ability to characterize and measure FEM (Focus Exposure Matrix) and EM (Exposure Matrix) wafers. The correlation of MCD and SWA to the focus and exposure dose was explored. CD-SEM measurements were used as a reference to compare the accuracy of scatterometry MCD measurements. While there was no reference tool available to compare scatterometry SWA measurements, the SWA and focus tracking on the FEM wafer were verified. In addition to the MTM methodology evaluation, a fleet of four SpectraShape 8810 tools was evaluated to measure the fleet's capability for in-line monitoring in high volume manufacturing. The final results confirmed that the Multi-Target Measurement approach on SpectraShape 8810 is an effective solution for gate ADI metrology and the robust fleet matching performance would enable in-line monitoring use.

Citation Download Citation

Wei-Jhe Tzai, Howard Chen, Yu-Hao Huang, Chun-Chi Yu, Ching-Hung Bert Lin, Shi-Ming Jeremy Wei, Zhi-Qing James Xu, Sungchul Yoo, Chien-Jen Eros Huang, Chao-Yu Harvey Cheng, Juli Cheng, Lanny Mihardja, and Houssam Chouaib "Apply multiple target for advanced gate ADI critical dimension measurement by scatterometry technology", Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 832420 (5 April 2012); https://doi.org/10.1117/12.916234

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