Paper
5 April 2012 Advanced full-automatic inspection of copper interconnects
S. Takada, N. Ban, T. Ishimoto, N. Suzuki, S. Umehara, L. Carbonell, N. Heylen, R. Caluwaerts, H. Volders, K. Kellens, Z. Tokei
Author Affiliations +
Abstract
The early detection of Cu sub-surface voids in nano-interconnects has become a main challenge with the reduction of the critical dimensions of the interconnects. A new methodology for full wafer Cu void inspection with high sensitivity and high speed has been developed using a Multi-Purpose SEM (MP-SEM) using high accelerating voltage, high resolution and multi BSE detectors. This inspection methodology has been used to evaluate the Cu metallization quality in nanointerconnects. The effectiveness of this inspection methodology was proven through the evidence of relations between Cu void density, trench widths, pattern density, and surrounding dummy structures.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Takada, N. Ban, T. Ishimoto, N. Suzuki, S. Umehara, L. Carbonell, N. Heylen, R. Caluwaerts, H. Volders, K. Kellens, and Z. Tokei "Advanced full-automatic inspection of copper interconnects", Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 83242R (5 April 2012); https://doi.org/10.1117/12.916254
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Cited by 1 scholarly publication.
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KEYWORDS
Copper

Inspection

Scanning electron microscopy

Semiconducting wafers

Cadmium sulfide

Resistance

Electrons

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