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19 March 2012 An in situ analysis of the resist pattern formation process
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In this paper, the 'pattern formation' characteristics of a polyhydroxystyrene (PHS)-acryl hybrid extreme ultraviolet (EUV) resist was investigated using a high speed atomic force microscope. This analysis covers the dissolution or development, rinse and drying processes that are conventionally applied after EUV exposure and post exposure bake. As a result, it was found that during the development process, the EUV-exposed resist film exhibited swelling characteristics. This was assumed to be the effect of the balance / imbalance in dissolvability introduced by the hydrophobic acryl and hydrophilic PHS components of this hybrid resist. During the rinse process with de-ionized water, the critical dimension (CD) of the resulting line pattern after development was observed to increase with rinse time. This was attributed to a possible permeation of water into the resist line pattern causing the CD to swell. Lastly, for the drying process, the same line pattern CD was found to shrink similar to pre-rinse sizes and taper at the top edges. This suggests evaporation of the rinse water imbedded into the resist line pattern.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Julius Joseph Santillan and Toshiro Itani "An in situ analysis of the resist pattern formation process", Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83250P (19 March 2012);

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