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19 March 2012 Spin-on-carbon-hardmask with high wiggling resistance
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Abstract
For the mass production of the advanced semiconductor device, the multi-layer process has been used for the essential technique {photoresist/ silicon contained hard mask (Si-HM)/ spin-on-carbon-hardmask (SOC)}. Spin -on-Carbon material plays a very important role during the etching process of substrates. The substrate etching process induces severe pattern deformations (called wiggling) especially with fine line/space patterns. Therefore, both the high etching resistances and the high wiggling resistance are demanded for SOC materials. In this study, we investigated the etching performances with several SOC materials. We found that the relationships between SOC properties and the resistance for wiggling generation. We will discuss the material design of novel SOC for high wiggling resistance.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasunobu Someya, Tetsuya Shinjo, Keisuke Hashimoto, Hirokazu Nishimaki, Ryo Karasawa, Rikimaru Sakamoto, and Takashi Matsumoto "Spin-on-carbon-hardmask with high wiggling resistance", Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83250U (19 March 2012); https://doi.org/10.1117/12.916128
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