Direct implant through BARC

Tomoya Ohashi; Makiko Umezaki; Yoshiomi Hiroi; Shigeo Kimura; Yuki Usui; Takahiro Kishioka

doi:10.1117/12.916132

19 March 2012 Direct implant through BARC

Tomoya Ohashi, Makiko Umezaki, Yoshiomi Hiroi, Shigeo Kimura, Yuki Usui, Takahiro Kishioka

Proceedings Volume 8325, Advances in Resist Materials and Processing Technology XXIX; 832519 (2012) https://doi.org/10.1117/12.916132
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

The lithography process for implant layer will be more difficult beyond 22nm node. Current method, TARC/ resist stacks, resist/ DBARC stacks and resist/ BARC with etching process, can't meet manufacture requirement. How to solve this issue will be very important topic. In this study, we evaluated resist/ BARC stacks without etching. We call this process "direct implant through BARC process". We focused on depth profile of implant ion in substrate after direct implant through BARC process. We evaluated dependency between ion depth profile and BARC property. As a result, we found out BARC thickness had a big impact on ion depth profile and component of BARC was injected into substrate. We discussed modification of substrate using component of BARC.

Citation Download Citation

Tomoya Ohashi, Makiko Umezaki, Yoshiomi Hiroi, Shigeo Kimura, Yuki Usui, and Takahiro Kishioka "Direct implant through BARC", Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 832519 (19 March 2012); https://doi.org/10.1117/12.916132

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