Development of Si-HM for NTD process

Wen Liang Huang; Yu Chin Huang; Bo Jou Lu; Yi Jing Wang; Yeh Sheng Lin; Chun Chi Yu; Satoshi Takeda; Yasunobu Someya; Makoto Nakajima; Yuta Kanno; Hiroyuki Wakayama; Rikimaru Sakamoto

doi:10.1117/12.916363

19 March 2012 Development of Si-HM for NTD process

Wen Liang Huang, Yu Chin Huang, Bo Jou Lu, Yi Jing Wang, Yeh Sheng Lin, Chun Chi Yu, Satoshi Takeda, Yasunobu Someya, Makoto Nakajima, Yuta Kanno, Hiroyuki Wakayama, Rikimaru Sakamoto

Author Affiliations +

Proceedings Volume 8325, Advances in Resist Materials and Processing Technology XXIX; 832523 (2012) https://doi.org/10.1117/12.916363
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Negative Tone Development (NTD) process with ArF immersion has been developed for the next generation lithography technology because it shows good resolution performance and process window for C/H and trench patterning. Because of the etch requirement, tri-layer process has been used popularly. However, most of the Si-HM materials are optimized for positive tone development process and most of them show poor lithography performance in NTD process. In this paper, we study the behaviors of Si-HM for NTD process, develop new concepts and optimize the formulation of Si-HM to match the resist for NTD process bellow N28 node device.

Citation Download Citation

Wen Liang Huang, Yu Chin Huang, Bo Jou Lu, Yi Jing Wang, Yeh Sheng Lin, Chun Chi Yu, Satoshi Takeda, Yasunobu Someya, Makoto Nakajima, Yuta Kanno, Hiroyuki Wakayama, and Rikimaru Sakamoto "Development of Si-HM for NTD process", Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 832523 (19 March 2012); https://doi.org/10.1117/12.916363

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