Paper
20 March 2012 Combinatorial process optimization for negative photo-imageable spin-on dielectrics and investigation of post-apply bake and post-exposure bake interactions
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Abstract
Patternable dielectric materials were developed and introduced to reduce semiconductor manufacturing complexity and cost of ownership (CoO). However, the bestowed dual functionalities of photo-imageable spin-on dielectrics (PSOD) put great challenges on the material design and development. In this work, we investigated the combinatorial process optimization for the negative-tone PSOD lithography by employing the Temperature Gradient Plate (TGP) technique which significantly reduced the numbers of wafers processed and minimized the developmental time. We demonstrated that this TGP combinatorial is very efficient at evaluating the effects and interactions of several independent variables such as post-apply bake (PAB) and post-exposure bake (PEB). Unlike most of the conventional photoresists, PAB turned out to have a great effect on the PSOD pattern profiles. Based on our extensive investigation, we observed great correlation between PAB and PEB processes. In this paper, we will discuss the variation of pattern profiles as a matrix of PAB and PEB and propose two possible cross-linking mechanisms for the PSOD materials to explain the unusual experimental results.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jihoon Kim, Ruzhi M. Zhang, Elizabeth Wolfer, Bharatkumar K. Patel, Medhat Toukhy, Zachary Bogusz, and Tatsuro Nagahara "Combinatorial process optimization for negative photo-imageable spin-on dielectrics and investigation of post-apply bake and post-exposure bake interactions", Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83252A (20 March 2012); https://doi.org/10.1117/12.916453
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KEYWORDS
Dielectrics

Lithography

Semiconducting wafers

Critical dimension metrology

Polymers

Photoresist materials

Coating

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