Paper
13 March 2012 High overlay accuracy for double patterning using an immersion scanner
Yuji Shiba, Katsushi Makino, Yasuhiro Morita, Chihaya Motoyoshi, Hajime Yamamoto, Jin Udagawa, Takahisa Kikuchi, Yosuke Shirata, Yuuki Ishii
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Abstract
Double patterning (DP) is widely regarded as the lithography solution for 32 nm half pitch semiconductor manufacturing, and DP will be the most likely litho technology for the 22 nm node [1]. When using the DP technique, overlay accuracy and CD control are of critical importance [2]. We previously introduced the NSR-S620D immersion scanner, which provides 2 nm overlay capabilities. In the case of the latest generation NSR-S621D system, improvements have been developed for further overlay accuracy enhancement. In this paper, we will show the overlay accuracy and Mix-and-Match performance of the NSR-S621D. Further, the marked improvement in product overlay and the overlay result in Spacer DP as a result of enhanced alignment accuracy will also be shown.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuji Shiba, Katsushi Makino, Yasuhiro Morita, Chihaya Motoyoshi, Hajime Yamamoto, Jin Udagawa, Takahisa Kikuchi, Yosuke Shirata, and Yuuki Ishii "High overlay accuracy for double patterning using an immersion scanner", Proc. SPIE 8326, Optical Microlithography XXV, 83260T (13 March 2012); https://doi.org/10.1117/12.916246
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KEYWORDS
Double patterning technology

Distortion

Optical alignment

Semiconducting wafers

Overlay metrology

Reticles

Scanners

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