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22 February 2012 Structural and optical properties of LuFeO3 thin films prepared on silicon (100) substrate by pulsed laser deposition
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Abstract
The LuFeO3 (LFO) nanocrystalline films with the average grain size of 20 nm have been grown on silicon (100) substrates by pulsed laser deposition. X-ray diffraction (XRD) analysis shows that LFO films are polycrystalline. The microstructure and surface morphology of LFO film are analyzed by Atomic force microscope (AFM) and the surface shows the film is compact. Spectroscopic ellipsometry (SE) was used to extract the optical properties of LFO films in the 1.1-3.1 eV (400-1100 nm) photon energy range at room temperature. By fitting the measured ellipsometric parameter data with a multilayer model system for the LFO thin films, the optical constants and thicknesses of the thin films have been obtained. The refractive index n and extinction coefficient k of the LFO thin films both decreases with increasing thickness.
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Liping Zhu, Hongmei Deng, Jianjun Tian, Pingxiong Yang, and Junhao Chu "Structural and optical properties of LuFeO3 thin films prepared on silicon (100) substrate by pulsed laser deposition", Proc. SPIE 8333, Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration, 83331F (22 February 2012); https://doi.org/10.1117/12.914548
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