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22 February 2012 Si nanowires arrays fabricated by wet chemical etching for antireflection and self-cleaning
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Here we report a simple and cost effective fabrication technique, which created large area vertical Si nanowires (diameter in ~200 nm) by means of silver induced wet chemical etching on single crystalline Si substrates. By this technique, Si nanowires were fabricated on single crystalline in aqueous 5M HF and 0.02M AgNO3 solution at room temperature. The scanning electron microscope (SEM) images indicate that etched silicon wafers consist of dense and nearly vertically aligned one-dimensional nanostructures. Length of Si nanowires was found to increase linearly with etching time (0-300 min). The mechanism of vertical nanowires formation can be understood as being a self-assembled Ag induced selective etching process based on the localized microscopic electrochemical cell model. A low reflectivity averaged ~1.7% from 450 to 790 nm was observed. The nanometer scale rough surface can make water droplet either in the so-called Wenzel or the Cassie regime, which can increase contact angle (CA). High CA makes the surface hydrophobicity and self-cleaning. Water CA (150°) was observed on the etched Si surface. Such antireflection (AR) and self-cleaning surface may have potential applications for silicon solar cells.
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Wei Zhang, Xiaotao Wang, Wuxing Lai, and Zirong Tang "Si nanowires arrays fabricated by wet chemical etching for antireflection and self-cleaning", Proc. SPIE 8333, Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration, 83331G (22 February 2012);

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