The influence of AlN buffer layer thickness grown by pulsed atomic layer epitaxy on the properties of GaN epilayer

Jin Zhang; H. Xiong; S. L. Li; H. Wang; Y. Y. Fang; J. Y. Tang; Y. Li; W. Tian; C. Q. Chen

doi:10.1117/12.920296

22 February 2012 The influence of AlN buffer layer thickness grown by pulsed atomic layer epitaxy on the properties of GaN epilayer

Jin Zhang, H. Xiong, S. L. Li, H. Wang, Y. Y. Fang, J. Y. Tang, Y. Li, W. Tian, C. Q. Chen

Author Affiliations +

Proceedings Volume 8333, Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration; 83331I (2012) https://doi.org/10.1117/12.920296
Event: Photonics and Optoelectronics Meetings 2011, 2011, Wuhan, China

Abstract

GaN epilayers were grown on the AlN buffer layer obtained by pulsed atomic-layer epitaxy (PALE). The influence of PALE-AlN buffer thickness on the quality of GaN epilayers were investigated by atomic force microscopy, high resolution X-Ray diffraction, and photoluminescence (PL) spectrum. The strain states of the GaN epilayers were studied by Raman spectrum. It was found that the thickness of PALE-AlN buffer layer is a key parameter that affects the quality of GaN epilayer, and a proper growth period of PALE-AlN buffer layer leads to excellent surface morphology, crystal quality and optical properties of the GaN epilayer.

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Jin Zhang, H. Xiong, S. L. Li, H. Wang, Y. Y. Fang, J. Y. Tang, Y. Li, W. Tian, and C. Q. Chen "The influence of AlN buffer layer thickness grown by pulsed atomic layer epitaxy on the properties of GaN epilayer", Proc. SPIE 8333, Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration, 83331I (22 February 2012); https://doi.org/10.1117/12.920296

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